MATLAB-Based Nanoscale Carbon Nanotube Transistor Simulation Program

Resource Overview

A MATLAB-based simulation program for nanoscale carbon nanotube transistors, featuring quantum transport modeling and self-consistent numerical solutions with optimized computational efficiency.

Detailed Documentation

In semiconductor device research, nanoscale carbon nanotube transistors have garnered significant attention due to their exceptional electrical properties. The MATLAB-based simulation program serves as an efficient research tool for simulating key performance metrics of these novel devices. The simulation program is constructed through three core modules: First, it establishes a quantum transport model for carbon nanotubes, considering current-voltage characteristics under ballistic transport conditions. Second, it integrates the standard drift-diffusion model for field-effect transistors while incorporating quantum confinement effects specific to nanoscale devices. Finally, it employs self-consistent calculations to solve Poisson's equation and continuity equations, obtaining steady-state potential distributions and carrier concentrations. The program adopts a modular design approach, allowing flexible adjustment of structural parameters such as carbon nanotube diameter and chirality, as well as operational conditions including gate voltage and drain-source voltage. Through parametric scanning capabilities, researchers can systematically analyze key device characteristics such as transfer characteristic curves and output characteristic curves. To enhance computational efficiency, the program implements matrix operation optimization and sparse matrix processing techniques. This simulation approach offers distinct advantages over traditional TCAD tools: it maintains the accuracy of physical models while leveraging MATLAB's powerful numerical computation capabilities for rapid results. It is particularly suitable for investigating nanoscale-specific physical phenomena such as size effects and quantum capacitance effects in carbon nanotube transistors. Implementation details include: - Quantum transport modeling using non-equilibrium Green's function (NEGF) formalism – Drift-diffusion equations solved with finite difference methods - Self-consistent loop implementation for coupled Poisson-continuity equations - Sparse matrix solvers for efficient large-scale computations - Parameterized sweeps using MATLAB's vectorization capabilities - Modular code structure with separate functions for transport calculation, potential solving, and current computation