Analysis and Modeling of Physical Processes and Phenomena in Thin Film Formation and Growth
1. Analysis and modeling of physical processes and phenomena in thin film formation and growth. 2. Computer simulation of thin film formation and growth processes using Monte Carlo and Molecular Dynamics methods, including implementation of stochastic algorithms for deposition events and force-field calculations for atomic interactions. 3. Simulation of porous silicon formation, focusing on etching mechanisms and surface morphology evolution through specialized boundary conditions.